A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.
The floating body effect of an asymmetric and Ge implanted partially depleted 0 8μm SOI nMOSFET is investigated.It is found that the drain breakdown voltage can be improved by about 1V and that the anomalous subthreshold slope and kink effect are also lessened.It is believed that the shallow junction in the source and defect states introduced by Ge implantation are responsible for the reduction of the floating body effect.
