SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.
Phosphate-coating was prepared for C/C composite using liquid-impregnation and different heat-treatment. The results show that the mass-loss rate of sample A with 1-2 ℃/min slow-cooling rate technology is 47%after oxidation at 700 ℃ for 20 h, while that of sample B with air-fast-cooling one is only 0.98%. SEM images reveal that the coating of sample A is full of micro-holes, micro-cracks and many piece-like crystal particles, while that of sample B is integrated and compacted in glassy state with a few of micro-cracks. The coating of sample A is almost exhausted only in 8 h oxidized-test at 700 ℃, while that of sample B remains integrated after 8 h test at 700 ℃ and becomes loose due to much small pores generated after 20 h test at 700 ℃.
