A quantum model based on solutions to the Schrodinger-Poisson equations is developed to investigate the device behavior related togate tunneling current for nanoscale MOSFETs with high-k gate stacks. This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance. Comparisons are made for gate current behavior between nMOSFET and pMOSFET high- k gate stack structures. The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
