基于0.5μm工艺设计一种带软启动电路大摆幅输入电压的线性稳压源（LDO）,为解决高电压输入时LDO输出节点的瞬态过冲电流问题,设计一种在缓冲器的输出端加入MOS开关的软启动方案,提高电路的安全可靠性。通过仿真分析,结果表明该电路在输入电压10~40 V变化,其线性调整度为7.5 m V@30 V,输出5 V稳定电压,负载电流范围0~10 m A,输出电流1~10 m A,瞬态变化时负载调整度为12 m V@9 m A。电源电压上电时间为1 ms时,LDO的输出过充电流不超过6 m A。
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
