Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
SnO2 nanoparticles with the average particle size of 5-30 nm were synthesized using SnCl4·5H2O as the precursor and NH3·H2O as the mineralizing agent by hydrothermal method.In the case of 1 kg/batch production,the effects of synthesis conditions including solution concentration,reaction temperature,pressure,time and pH value on the grain size,particle morphology and crystal structure of SnO2 were systematically studied.The particles were characterized by X-ray diffraction（XRD） and transmission electron microscopy（TEM）.The results show that,the particle size can be well controlled in the range of 5-30 nm by adjusting the processing parameters such as reaction temperature and time when the crystal structure and particle morphology remain unchanged.The previous reports,the unusual dependences of the grain size of SnO2 on reaction temperature and time were found.The mechanism for such abnormal grain growth behavior was tentatively elucidated.
