A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.
