Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.
