This paper investigates the effects of concentration on the crystalline structure,the morphology,and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs).The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared.The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands.It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78×10 3 cm 2 /Vs which is higher by a factor of 13 than that with 0.5 wt%.Further,an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs.The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm 2 /Vs by thermal annealing at 150 C,and the value of on/off current ratio can reach 10 4.
In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.
We studied the luminescent and photovoltaic properties of poly(9,9-dioctylfluorene-co-bithiophene)(F8T2) based on ITO/PEDOT:PSS/F8T2/Bphen/LiF(0 or 1 nm)/Al and ITO/PEDOT:PSS/F8T2:PCBM/Bphen/Al.A stable and bright yellow emission was obtained from polymer F8T2,and the electroluminescence power reached 45 ?W at a 15 V driving voltage.Polymer F8T2 shows a broad absorption band from 400 to 500 nm,and has a shorter absorption edge at about 560 nm compared to that of the typical electron donor P3HT(650 nm).The photoluminescence quenching of F8T2 occurs with only a small fraction of blended PCBM due to the effective exciton dissociation at the interface between F8T2 and PCBM.Polymer solar cells(PSCs) using F8T2:PCBM as the active layer show a low power conversion efficiency(PCE) of 0.10% with an open circuit voltage(Voc) of 0.91 V and short circuit current density(Jsc) of 0.23 mA/cm2.The PSCs using F8T2:P3HT:PCBM as the active layer have a Voc of 0.85 V and Jsc of 3.02 mA/cm2,improving the PCE by about 0.90%.We attribute the improved cell performance to the higher number of photons harvested by P3HT molecules.
Ca2BO3Cl:Ce3+,Ca2BO3Cl:Tb3+,and Ca2BO3Cl:Ce3+,Tb3+ phosphors are synthesized by a high temperature solid-state reaction.The emission intensity of Ce3+ or Tb3+ in Ca2BO3Cl is influenced by the Ce3+ or Tb3+ doping content,and the optimum concentrations of Ce3+ and Tb3+ are 0.03 mol and 0.05 mol,respectively.The concentration quenching effect of Ce3+ or Tb3+ in Ca2BO3Cl occurs,and the concentration quenching mechanism is d-d interaction for either Ce3+ or Tb3+.The Ca2BO3Cl:Ce3+,Tb3+ can produce colour emission from blue to green by properly tuning the relative ratio between Ce3+ and Tb3+,and the emission intensity of Tb3+ in Ca2BO3Cl can be enhanced by the energy transfer from Ce3+ to Tb3+.The results indicate that Ca2BO3Cl:Ce3+,Tb3+ may be a promising double emission phosphor for UV-based white light emitting diodes.
The contact effect on the performances of organic thin film transistors is studied here.A C 60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance.By a 3 nm C 60 modification,the injection barrier is lowered and the contact resistance is reduced.Thus,the field-effect mobility increases from 0.12 to 0.52 cm 2 /(V·s).It means that inserting a C 60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance.The output curve is simulated by using a charge drift model.Considering the contact effect,the field effect mobility is improved to 1.15 cm 2 /(V·s).It indicates that further reducing the contact resistance of OTFTs should be carried out.
