A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process,in which the function of the prototype is verified.
