Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH,GaN is subjected to etching. At the same time,all surface irregularities,including etch pyramids,roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed,and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm,as measured by atomic force microscopy.
