您的位置: 专家智库 > >

国家自然科学基金(61036009)

作品数:5 被引量:2H指数:1
发文基金:国家自然科学基金国家高技术研究发展计划更多>>
相关领域:电子电信自动化与计算机技术理学建筑科学更多>>

文献类型

  • 4篇中文期刊文章

领域

  • 2篇电子电信
  • 2篇自动化与计算...
  • 1篇理学

主题

  • 1篇PHOTON...
  • 1篇RESONA...
  • 1篇VCSEL
  • 1篇YOUNG
  • 1篇AU_NAN...
  • 1篇DEVICE
  • 1篇ELECTR...
  • 1篇EMITTI...
  • 1篇INTER
  • 1篇INTERF...
  • 1篇LIGHT
  • 1篇NANOPA...
  • 1篇COMPLE...
  • 1篇SILICO...
  • 1篇SLIT
  • 1篇SHAPE
  • 1篇SILICO...
  • 1篇MICROR...
  • 1篇BIOSEN...
  • 1篇HEIGHT

传媒

  • 2篇Chines...
  • 1篇Journa...
  • 1篇Chines...

年份

  • 1篇2013
  • 3篇2011
5 条 记 录,以下是 1-4
排序方式:
Vertical cavity surface emitting laser transverse mode and polarization control by elliptical hole photonic crystal
2013年
The polarization of traditional photonic crystal(PC) vertical cavity surface emitting laser(VCSEL) is uncontrollable,resulting in the bit error increasing easily.Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently.We analyze the far field divergence angle,and birefringence of elliptical hole PC VCSEL.When the ratio of minor axis to major axis b/a = 0.7,the PC VCSEL can obtain single mode and polarization.According to the simulation results,we fabricate the device successfully.The output power is 1.7 mW,the far field divergence angle is less than 10°,and the side mode suppression ratio is over 30 dB.The output power in the Y direction is 20 times that in the X direction.
曹田徐晨解意洋阚强魏思民毛明明陈弘达
Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology被引量:2
2011年
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
王伟黄北举董赞陈弘达
关键词:ELECTROLUMINESCENCE
Effect of shape,height,and interparticle spacing of Au nanoparticles on the sensing performance of Au nanoparticle array
2011年
The effect of shape, height, and interparticle spacing of Au nanoparticles (NPs) on the sensing performance of Au NP array is systematically investigated. Lengthening the major axis of elliptical NPs with the minor axis kept constant will cause the redshift of the local surface plasmon (LSP) resonance mode, enhance the sensitivity, and widen the resonance peaks. Larger height corresponds to smaller LSP resonance wavelength and narrower resonance peak. With each NP size unchanged, larger interparticle spacing corresponds to larger resonance wavelength and smaller full-width at half-maximum (FWHM). Moreover, duty cycle is important for sensitivity, which is largest when the duty cycle is 0.4.
李俊华阚强王春霞陈弘达
关键词:NANOPARTICLESRESONANCE
A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation
2011年
A novel silicon-on-insulator microring biosensor based on Young's twoslit interference has been demonstrated. The transducer signal from electric field intensity distribution on the interference screen is given by using the transfer matrix method(TMM) and two-slit interference principle.The result shows that the structure we propose is advantageous for sensing as the interference pattern is very sensitive to the ambient refractive index around the microring.A small perturbation in refractive index around the microring△n_c will result in a notable shift of destructive interference points(DIPs) on the interference screen.By detecting the shift of the DIPs,the ambient refractive index change can be obtained.
苏保青王春霞阚强李俊华解意洋王真真陈弘达
关键词:SILICON-ON-INSULATORMICRORINGBIOSENSOR
共1页<1>
聚类工具0