We have presented a theoretical calculation of the differential cross section （DCS） for the electron Ra- man scattering （ERS） process associated with the interface optical （IO） and surface optical （SO） phonons in mul- tilayer coaxial cylindrical AlxGal-xAs/GaAs quantum cables （QC）. We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are stud- ied. Singularities are found to be sensitively size-dependent and by varying the size of the QC, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for the QC with different size is presented. The numerical results are also compared with those of experiments.
