All optical clock recovery from non return-to-zero （NRZ） data using an semiconductor optical amplifier （SOA） loop mirror and a mode-locked SOA fibcr lascr is firstly schematically explained and experimentally demonstrated at 10 Gb/s. Furthermore, the pulse quality of tile recovered cluck is cffcctivcly improved by using a continuous-wave （CW） assist light in the gain region of SOA, through which the amplitude modulation is reduced from 57.2% to 8.47%. This scheme is a promising method for clock recovery from NRZ data in the future all-optical communication networks.
This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.
A non-return-to-zero （NRZ） to pseudo-return-to-zero （PRZ） converter consisting of a semiconductor optical amplifier （SOA） and an arrayed waveguide grating （AWG） is proposed, by which the enhancement of clock frequency component and clock-to-data suppression ratio of the XRZ data are evidently achieved. All- optical clock recovery from XRZ data at 10 Gb/s is successfully demonstrated with the proposed XRZ-to- PRZ converter and a mode-locked SOA fiber laser. Furthermore, XRZ-to-RZ format conversion of 10 Gb/s is realized bv using the recovered clock as the control light of terahertz optical asymmetric demultiplexer （TOAD）, which further proves that the proposed clock recovery scheme is applicable.
Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.
A new fabricating method is demonstrated to realize two different Bragg gratings in an identical chip using traditional holographic exposure. Polyimide is used to protect one Bragg grating during the first period. The technical process of this method is as simple as that of standard holographic exposure.
An all-optical wavelength converter, based on nonlinear polarization rotation （NPR） in semiconductor optical amplifier （SOA） and array waveguide grating （AWG） filtering, is experimentally demonstrated. The wavelength converter can provide excellent operation including extinction ratio and Q factor. The simultaneous two wavelength conversion outputs are successfully obtained at 20 Gb/s.
