Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexagonal single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas flow.Scanning electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is time-dependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.
