The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.
The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire （QWR） is theoretically inves- tigated under Born approximation. We calculate the screened mobility due to clusters （high indium composition lnGaN） scattering in the InxGal_xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas （1DEG） concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering, Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.
A new three-layer hot-wall horizontal flow metal-organic chemical vapor deposition （MOCVD） reactor is proposed. When the susceptor is heated, the temperature of the wall over the susceptor also increases to the same temperature. Furthermore, the flowing speed of the top layer is also increased by up to four times that of the bottom layer. Both methods effectively decrease the convection and make most of the metal organic （MO） gas and the reactive gas distribute at the bottom surface of the reactor. By selecting appropriate shapes, sizes, nozzles array, and heating area of the walls, the source gases are kept in a laminar flow state. Results of the numeric simulation indicate that the nitrogen is a good carrier to reduce the diffusion among the precursors before arriving at the substrate, which leads to the reduction ofpre-reaction. To get a good comparison with the conventional MOCVD horizontal reactor, the two-layer horizontal MOCVD reactor is also investigated. The results indicate that a two- layer reactor cannot control the gas flow effectively when its size and shape are the same as that of the three-layer reactor, so that the concentration distributions of the source gases in the susceptor surface are much more uniform in the new design than those in the conventional one.
The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.
The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm-Pine＇s random-phase approximation in the two-subband model.The new simplified analytical expressions of the Coulomb interaction matrix elements and dielectric functions are derived and numerically discussed.In addition,the electron density and temperature dependences of dispersion features are also investigated.We find that in the two-dimensional parabolic quantum well,the intrasubband upper branch is coupled with the intersubband mode,which is quite different from other quasi-one-dimensional systems like a cylindrical quantum wire with an infinite rectangular potential.In addition,we also find that higher temperature results in the intersubband mode（with an energy of 12 meV（～ 3 THz）） becoming totally damped,which agrees well with the experimental results of Raman scattering in the literature.These interesting properties may provide useful references to the design of free-standing nanorod based devices.
