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国家重点基础研究发展计划(2007CB935501)

作品数:6 被引量:14H指数:2
相关作者:何春山王伟良李志兵陈桂华更多>>
相关机构:中山大学东莞理工学院更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金更多>>
相关领域:理学一般工业技术电子电信更多>>

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Fabrication and field emission performance of arrays of vacuum microdiodes containing CuO nanowire emitters grown directly on glass without a catalyst被引量:1
2011年
真空 microelectronic 来源的数组用含铜的氧化物(CuO ) 在玻璃底层上被制作 nanowire emitters。电子来源的数组拥有 microdiode 结构,它能有效地导致域排放并且在三极管类型设备操作控制射出的电子的交货到阳极。为没有使用催化剂并且在象 400 潩?敦摥慢正瀠牡浡瑥牥甠楳杮琠敨猠瑡汥楬整猭湥敳?潎浲污穩摥?晩敦敲据?敖敧慴楴湯?摮硥?一样低的温度,精确在一个数组在 microcavities 的中心种 CuO nanowires 的一种技术???湡?扯敳癲摥琠浥数慲畴敲?潦?桴?数楲摯ㄠ?有????污?敳獡湯?瘠来瑥瑡潩?硥牥獴愠洠'?瑳潲杮牥映牯楣杮漠??慭?桴湡漠??業?愠摮琠畨?慨???獢慴瑮慩?晥敦瑣漠?桴?楤牵慮?整灭牥瑡牵?慲杮??剔?癯牥?楨慮?楓湧晩捩湡?潰楳楴敶映敥'N捡獫漠??慭?湡?桴?呄?耶喌嚊?牡慥?景?楨慮眠瑩?桴?
SHAO PengRui DENG ShaoZhi CHEN Jun XU NingSheng
关键词:真空微电子器件场发射性能
角转移矩阵重整化群方法及其应用
2011年
相变和临界现象在自然界普遍存在,研究的主要手段是重整化群理论。随着计算机技术的发展,基于重整化群思想的数值模拟也得到了广泛的应用,它能够精确地计算系统处于临界状态时的物理参数。该文采用角转移矩阵重化群方法计算了无外场二维伊辛模型的临界耦合常数,得到了准确度为10-5的数值计算结果。
何春山
关键词:二维伊辛模型
Quantum computation with two-dimensional graphene quantum dots被引量:1
2012年
We study an array of graphene nano sheets that form a two-dimensional S = 1/2 Kagome spin lattice used for quantum computation. The edge states of the graphene nano sheets are used to form quantum dots to confine electrons and perform the computation. We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots. It is shown that both schemes contain a great amount of information for quantum computation. The corresponding gate operations are also proposed.
Li Jie-SenLi Zhi-BingYao Dao-Xin
关键词:GRAPHENE
Low-temperature Synthesis of Large-area Films of Molybdenum Trioxide Microbelts in Air and the Dependence of Their Field Emission Performance on Growth Conditions被引量:7
2010年
A simple method is introduced for the preparation of large-area films of molybdenum trioxide (MoO3) microbelts. It is found that such films can be grown on indium tin oxide (ITO) glasses or silicon substrates at low temperatures by thermal evaporation deposition in air without using catalyst. Field emission measurements show that the turn-on field of the MoO3 microbelts is as low as 2.2 V/μm required to obtain a current density of 10 μA/cm^2, The combination of the simplicity of the growth method and the attractive field emission performance makes it a potential low-cost technique for the preparation of large-area field emission cold cathode material.
Dongmei Ban,Ningsheng Xu,Shaozhi Deng,Jun Chen and Juncong She State Key Lab of Optoelectronic Materials and Technologies,Guangdong Province Key Laboratory of Display Material and Technology,School of Physics and Engineering,Sun Yat-sen University,Guangzhou 510275,China
Towards an optical coupler using fine-wire:a study of the photovoltaic effect of a heterojunction formed in a single fine-wire of tungsten oxides
2010年
Nanodevices using the photovoltaic effect of a single nanowire have attracted growing interest. In this paper, we consider potential applications of the photovoltaic effect to optical signal coupling and optical power transmission, and report on the realization of a heterojunction formed between WO2 and WO3 in a fine-wire having a diameter on the micrometer scale. Using a laser beam of 514.5 nm as a signal source, the WO2-WO3 heterojunction yields a maximum output power of up to 37.4 pico watt per heterojunction. Fast responses (less than a second) of both photovoltaic voltage and current are also observed. In addition, we demonstrate that it is a simple and effective way to adapt a commercial Raman spectrometer for the combined functions of fabrication, material characterization and photovottaic measurement of an optical signal coupler and optical power transmitter based on a fine-wire. Our results show an attractive perspective of developing nanowire or fine-wire elements for coupling optical signals into and for powering a nanoelectronic or nano-optoelectronic integrated circuit that works under the condition of preventing it from directly electrically connecting with the optical coupler.
陈尚辉陈建邓少芝许宁生
关键词:HETEROJUNCTIONPHOTOVOLTAIC
镜像势对碳纳米管阵列场发射特性的影响被引量:5
2009年
采用多尺度量子化学方法模拟了碳纳米管阵列的场发射特性.碳纳米管镜像势的作用可以等效地用原子尺寸的理想金属球的镜像势来代替.模拟计算结果表明,考虑了镜像势作用后的碳纳米管阵列发射电流密度比没有考虑镜像势的结果增大了约6倍.
何春山王伟良陈桂华李志兵
关键词:碳纳米管场致发射
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