Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon(mc-Si) surface texturing. In this paper, capacitively coupled plasma(CCP) driven by a dual frequency(DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency(RF)input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density n9e must be larger than 6.3 × 10cm-3and the spectral intensity ratio of the F atom to that of the O atom([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109cm-3.
利用工作在浮点模式下的发射探针,对500 Hz脉冲调制的27.12 MHz容性耦合氩气等离子体的空间电位和电子温度的时变特性进行了诊断.等离子体空间电位是通过测量强热状态下的发射探针电位获得的,而电子温度则是由发射探针在冷、热状态下的电位差来估算得到.测量结果表明:脉冲开启时,空间电位会快速上升并在300μs内趋于饱和;当脉冲关断后,空间电位经历了快速下降后趋于稳定的过程.电子温度在脉冲开启时存在过冲并趋于稳定的特征;而在脉冲关断期间,电子温度在300μs内则快速下降到0.45 e V后略有上升.无论在脉冲开启或关断期间,空间电位基本上都随功率和气压的变化存在有线性的依赖关系;而放电功率对脉冲开启期间过冲电子温度与稳态电子温度差异的影响较大.针对空间电位和电子温度在各阶段及不同放电条件下的时变特性,给出了相应的解释.
