Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabri- cated. TBADN:3%DSAPh and Alq3:DCJTB/TBADN:TBPe/Alq3:C545 were used as emitting materials of micro- cavity OLEDs. On a patterned glass substrate, silver was deposited as re?ective anode, and copper phthalocyanine (CuPc) layer as HIL and 4’-bis[N-(1-Naphthyl)- N-phenyl-amino]biphenyl (NPB) layer as HTL were made. Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%. By changing the thickness of indium tin oxide ITO, deep blue with Commission Internationale de L’Eclairage chromaticity coordinates (CIEx,y) of (0.141, 0.049) was obtained on TBADN:3%DSAPh devices, and different color(red, blue and green)was ob- tained on Alq3:DCJTB/TBADN:TBPe/Alq3:C545 devices, full width at half maxima (FWHM) was only 17 nm. The spectral intensity and FWHM of emission in cavity devices have also been studied.
We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor（OTFT） with the purpose of improving the performance of the SiO2 gate insulator. The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.
