A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.
A fully pipelined 10 B/8 B decoder is presented with shorter critical path than before,and so its speed is improved greatly.Based on the proposed architecture,a 10 B/8 B decoder is implemented based on standard cells in 0.18μm CMOS technology with a core area of 375×375μm2.Measurement results show that the decoder works well and its speed can be up to 6.25 Gbps.At a 1.8 V power supply,the total power consumption is 21.6 mW during 6.25 Gbps operation and the peak-to-peak jitter in the eye diagram is 177.8 ps.
A fast-locking, low-jitter, phase-locked loop （PLL） with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short locking time. The voltage-controlled oscillator within the PLL consists of four-stage ring oscillators which are coupled to each other and oscillate with the same frequency and a phase shift of 45. The PLL is fabricated in 0. 1Stem CMOS technology. The measured phase noise of the PLL output at 500kHz offset from the 5GHz center frequency is - 102.6dBc/Hz. The circuit exhibits a capture range of 280MHz and a low RMS jitter of 2.06ps. The power dissipation excluding the output buffers is only 21.6roW at a 1.8V supply.
A zero-pole cancellation transimpedance amplifier（TIA）has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration.Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ωfor 1.5 pF photodiode capaci- tance,with a gain-bandwidth product of 3.4 THz·Ω.Even with 2 pF photodiode capacitance,the bandwidth exhibits a decline of only 300 MHz,confirming the mechanism of the zero-pole cancellation configuration.The input resis- tance is 50Ω,and the average input noise current spectral density is 9.7 pA/√ Hz.Testing results shows that the eye diagram at 1 Gb/s is wide open.The chip dissipates 17 mW under a single 3.3 V supply.
