This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding （SIV） in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.
Hydrostatic stresses of copper dual-damascene interconnects are calculated by a commercial finite element software in this paper.The analytical work is performed to examine the effects of different low-k(k is permittivity)dielectrics,barrier layer and aspect ratio of via on hydrostatic stress distribution in the copper interconnects.The results of calculation indicate that the hydrostatic stresses are highly non-uniform throughout the copper interconnects and the highest tensile hydrostatic stress exists on the top interface of lower level interconnect near via.Both the high coefficient of thermal expansion and the low elastic modulus of the low-k dielectrics and barrier layer can decrease the highest hydrostatic stress on the top interface,which can improve the reliability of the copper interconnects.
