We report a polarization dependent reflection phenomenon beyond the normal incidence witn a subwavelengm nanorod chain. Light waves of the transverse electric mode will be totally reflected while those of the transverse magnetic mode will transmit through. The total reflection or transmission phenomenon can be seen as a constructive or destructive interference of the incident field with the transverse mode field of the chain. With the low-loss feature and the ultra-compact characteristic, this structure may find applications in photonic circuits.
The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel transistors.The enhanced DIBL effect manifests as the DIBL parameter increases with total dose.Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor.The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.
A compact bi-directional （BiDi） triplexer using grating-assisted multimode interference （MMI） coupler is proposed based on silicon nanowire waveguides.Because of the high index contrast between silicon and silicon dioxide, the size of the structure is greatly reduced with a footprint of 2.5×911 （μm）. Asymmetrical ports are introduced in the MMI structure to satisfy the bandwidth requirements of the industrial standards ITU-T G.983.3-dB bandwidths of 100, 22, and 15 nm are obtained for the wavelengths of 1 310, 1 490, and 1 550 nm, respectively. The device can be readily fabricated using a commercial CMOS process.
