We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13-channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refractive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickness of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick matching layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.
The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μm is investigated experimentally.It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent.The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current,arising from different self-assembled doping levels.
In this paper,we present the design,fabrication,and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm,which mainly comprises a diluted waveguide,a single-mode rib waveguide and a p–i–n photodiode with an extended optical matching layer.The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain(3D FDTD) method.The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber.Moreover,a linear response of more than 72-mW optical power is achieved,where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.
High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer,charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.
