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国家自然科学基金(61076051)

作品数:6 被引量:5H指数:2
相关作者:白一鸣黄添懋陈诺夫施辉伟何海洋更多>>
相关机构:华北电力大学常州英诺能源技术有限公司浙江大学更多>>
发文基金:国家自然科学基金北京市自然科学基金国家高技术研究发展计划更多>>
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Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi_2 layer synthesized by ion implantation
2011年
The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2demonstrate the possibility of using NiSi2to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2layers synthesized by ion implantation,and the roughness of the NiSi2layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.
谭海仁游经碧张曙光高红丽尹志岗白一鸣张秀兰张兴旺屈盛
关键词:PHOTOLUMINESCENCE
Photocatalytic and electrochemical degradation of methylene blue by titanium dioxide
2014年
A photoanode structure for dye-sensitized solar cells has been applied into the photocatalytic/electrochemical cooperative degradation of methylene blue solutions.The low eutectic point of titanium dioxide(TiO2)with a fluorine-doped tin dioxide(FTO)conductive layer results in a high reactivity of TiO2for the photocatalytic process as well as a good electron transfer for the electrochemical process.The porous TiO2layer maintains a large surface area for the degradations.Through the combinational process,the degradation velocity was improved by*36%,compared to a pure photocatalytic process.
Min YangXinling LiuJikun ChenFanqi MengYuliang ZhangHelmut BrandlThomas LippertNuofu Chen
关键词:电化学降解亚甲蓝染料敏化太阳能电池电化学过程
Preparation and properties of polycrystalline silicon seed layers on graphite substrate被引量:2
2012年
Polycrystalline silicon(poly-Si) seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of Si(220) preferred orientation. When the substrate temperature is higher than 700℃,the peak intensity of X-ray diffraction(XRD) from Si(220) increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing (RTA) temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si(220) preferred orientation of poly-Si seed layers.
李宁陈诺夫白一鸣何海洋
Investigation of the thermal conductivities across metal-insulator transition in polycrystalline VO_2
2012年
Previous reports about the thermal conductivities of VO2 showed various temperature dependences across metal-insulator transition (MIT) temperature. In this work, polycrystalline VO2 samples were fabricated by spark plasma sintering of VO2 powder. Temperature dependences of their thermal conductivities were investigated using laser flash technique, and the thermal conductivity showed a significant decrease trend from metal-phase to insulator phase. Electrical transport properties were investigated to confirm both carrier and lattice contribution to the thermal conductivity. It is found that the lattice thermal conductivity decreased significantly across MIT point, which may be caused by soft phonon mode in metal phase of VO2 .
CHEN JiKunLIU XinLingYUAN XunZHANG YuLiangGAO YanFengZHOU YanFeiLIU RuiHengCHEN LiDongCHEN NuoFu
关键词:晶格热导率VO2温度依赖性转变温度
石墨衬底上具有(220)/(400)择优取向多晶硅薄膜的制备及性质(英文)被引量:3
2015年
在石墨衬底上分别制备了具有(220)和(400)择优取向的多晶硅薄膜。首先利用磁控溅射技术直接在石墨衬底上制备非晶硅薄膜层,以及先制备Zn O过渡层,再在Zn O过渡层上制备非晶硅薄膜层;然后采用快速退火法对非晶硅薄膜晶化,使其形成多晶硅薄膜籽晶层。XRD测试表明,未引入Zn O过渡层的多晶硅薄膜籽晶层具有高度(220)择优取向,而引入Zn O过渡层的多晶硅薄膜籽晶层具有高度(400)择优取向;最后在多晶硅籽晶层上通过对流辅助化学气相沉积(Co CVD)制备多晶硅薄膜。根据SEM、XRD、拉曼测试表明,多晶硅薄膜的性质延续了多晶硅籽晶层的性质,未引入Zn O过渡层的样品,具有高度(220)择优取向。引入Zn O过渡层后的样品,具有高度(400)择优取向,(400)择优取向的转变有利于后续多晶硅薄膜太阳电池的制作。同时对Si(220)和Si(400)择优取向的形成原因做了初步分析。
辛雅焜陈诺夫吴强白一鸣陈吉堃何海洋李宁黄添懋施辉伟
关键词:多晶硅薄膜氧化锌
高压GaAs微型太阳电池阵列的制备
2011年
为了提高GaAs微型太阳电池的输出性能,对微型太阳电池阵列的主要工艺进行了研究和改进。通过对帽层、背电极层和台面的选择性/非选择性湿法腐蚀工艺的探索,实现了对最佳腐蚀液的配比、腐蚀时间和温度的控制。采用侧壁钝化工艺和聚酰亚氨(PI)/SiO2/TiAu/SiO2新型互连结构,不仅确保了电池单元之间有效的隔离和互连,而且极大地降低了侧壁载流子复合电流,同时这种新型互连结构可有效防止由于衬底光敏现象引起的漏电流。经过上述器件工艺改进,获得了高集成度GaAs微型太阳电池阵列。电流-电压(JSC-VOC)测试结果显示,器件的开路电压达到84.2V,填充因子为57%。
白一鸣陈诺夫王彦硕王俊黄添懋汪宇张兴旺尹志刚张汉吴金良姚建曦
关键词:GAAS太阳电池漏电流互连结构
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