本文设计了一种通过在版图布局中引入伪集电极的方法来提高锗硅异质结双极晶体管(Si Ge HBT)抗单粒子性能的方法.利用半导体器件模拟工具,针对加固前后的Si Ge HBT开展了单粒子效应仿真模拟,分析了伪集电极对Si Ge HBT电荷收集机理的影响.结果表明,引入的伪集电极形成的新的集电极-衬底结具有较大的反偏能力,加固后Si Ge HBT伪集电极通过扩散机理,大量收集单粒子效应产生的电荷,有效地减少了实际集电极的电荷收集量,发射极、基极电荷收集量也有不同程度的降低,加固设计后Si Ge HBT的单粒子效应敏感区域缩小,有效的提高了Si Ge HBT器件抗单粒子效应辐射性能.此项工作的开展为Si Ge HBT电路级单粒子效应抗辐射加固设计打下良好的基础.
In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors(SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional(3D) simulation model is established, the single event effect(SEE) simulation is further carried out on the basis of Si Ge HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient(SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate(C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.
This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.
