Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving SchrSdinger＇s and Poisson＇s equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093.
Graphene is an interesting two-dimensional carbon allotrope that has attracted considerable research interest because of its unique structure and physicochemical properties. Studies have been conducted on graphene-based nanomaterials including modified graphene, graphene/semiconductor hybrids, graphene/metal nanoparticle composites, and graphene-complex oxide composites. These nanomaterials inherit the unique properties of graphene, and the addition of functional groups or the nanoparticle composites on their surfaces improves their performance. Applications of these materials in pollutant removal and environmental remediation have been explored. From the viewpoint of environmental chemistry and materials, this paper reviews recent important advances in synthesis of graphene-related materials and their application in treatment of environmental pollution. The roles of graphene-based materials in pollutant removal and potential research are discussed.
An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the A1GaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations.
Ni Schottky contacts on A1GaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N2 ambient at 600℃ for different times （0.5, 4.5, 10.5, 18, 33, 48 and 72 h）. Current-voltage （I-V） and capacitance-voltage （C-V） relationships are measured, and SchrSdinger＇s and Poisson＇s equations are self- consistently solved to obtain the characteristic parameters related to A1GaN/GaN heterostructure $chottky contacts： the two-dimensional electron gas （2DEG） sheet density, the polarization sheet charge density, the 2DEG distribution in the triangle quantum well and the Schottky barrier height for each thermal stressing time. Most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2DEG from the A1CaN/GaN interface increases with the increase of thermal stressing time. The changes of the characteristic parameters can be divided into two stages. In the first stage the strain in the A1GaN barrier layer is present. In this stage the characteristic parameters change rapidly compared with those in the second stage in which the AlGaN barrier layer is relaxed and no strain is present.
