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电纺丝方法制备GaN:Eu^(2+)纳米纤维与发光特性（英文）: 2017年; 通过结合静电纺丝和氨化技术方法合成了Eu^(2+)掺杂的GaN(GaN:Eu^(2+))纳米纤维.SEM和TEM图像显示纳米纤维由尺寸均匀分布的GaN纳米颗粒组成.XRD测试结果表明,GaN:Eu^(2+)样品主要为六方相GaN(hGaN),其平均粒径为7.3 nm.进一步的拉曼测试结果显示出现了两个额外的GaN拉曼位移,波数分别位于252和422 cm^(-1).室温光致发光谱表明GaN基质中的Eu^(2+)在407; 陈宇陈宇魏学成; 关键词：蓝光发射氨化技术

Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods: 2013年; The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening meth- ods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.; 安铁雷孙波魏同波赵丽霞段瑞飞廖元勋李晋闽伊福廷; 关键词：CSCI

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国家自然科学基金(61274008)