In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.
The role of temperature on the oxidation dynamics of Cu20 on ZnO （0001） was investigated during the oxidation of Cu （111）/ZnO （0001） by using oxygen plasma as the oxidant. A transition from single crystalline Cu20 （111） orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300 ~ C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu （111） film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu （lll）/ZnO （0001）.
