采用甚高频等离子体增强化学气相沉积技术,基于优化表面形貌及光电特性的溅射后腐蚀ZnO:Al衬底,将通过调控工艺参数获得的器件质量级高速微晶硅(μc-Si:H)材料(沉积速率达10.57?/s)应用到微晶硅单结电池中,获得了初始效率达7.49%的高速率超薄微晶硅单结太阳电池(本征层厚度为1.1μm).并提出插入n型微晶硅和p型微晶硅的隧穿复合结,实现了非晶硅顶电池和微晶硅底电池之间的低损电连接,由此获得了初始效率高达12.03%(Voc=1.48 eV,Jsc=11.67 m A/cm2,FF=69.59%)的非晶硅/微晶硅超薄双结叠层电池(总厚度为1.48μm),为实现低成本生产太阳电池奠定了基础.
We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.
Li ChenXinliang ChenYiming LiuYing ZhaoXiaodan Zhang
Textured glass substrates with crater-like feature sizes of-5-30 μm were obtained using the chemical etching method through adjusting the treatment round （R）. Pyramid-like boron-doped zinc oxide （ZnO：B） films with feature sizes of -300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition （MOCVD） technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO：B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO：B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO：B exhibited a high root mean square （RMS） roughness of -160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO：B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO：B was applied in the silicon （Si） based thin film solar cells. The high haze etched glass/ZnO：B substrates have potential merits for thin film solar cells.
