The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1_xGex contacts on heavily doped p-type strained Sil-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional com- plementary metal-oxide-semiconductor （CMOS） process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Sil-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10^19 cm^-3 is nearly one order of magnitude lower than that of the sam- ples with doping concentration of 5 × 10^17 cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.
We have fabricated the epitaxial Nb-doped SrTiO3(NbSTO) thin films on Si substrates using a TiN film as the buffer layer.The oxygen-treatment and temperature dependence of electrical properties has been investigated.Oxygen treatment showed the surface change of NbSTO films has immense influence on the resistance switching.The resistance ratio of two resistance states decreased after oxygen treatment.With tested-temperature rising,the resistance and resistance ratio of two resistance states increased.The resistance switching of Pt/NbSTO junction as a function of oxygen-treatment and temperature can be explained by the charge trapping and detrapping process in the Pt/NbSTO interface,which will help understand the resistance switching mechanism of oxides.
