Piezoelectric ceramics of 0.6(Bi0.9La0.1)FeO3-0.4Pb(Ti1-xMnx)O3 (BLF-PTM) for x=0, 0.01, 0.02, and 0.03 were prepared by sol-gel process combined with a solid-state reaction method. The tan? for BLF-PTM of x=0.01 is just 0.006 at 1 kHz, drastically decreasing by using Mn dopants. The TC increases to 490 ℃ for BLF-PTM of x=0.02. Furthermore, Mn modification effectively enhances the poling state and the piezoelectric properties of BLF-PTM. The kp, Qm, d33, and g33 of 0.34, 403, and 124 pC1·N-1 and 37×10-3 Vm·N-1 are achieved for BLF-PTM of x=0.01. The results indicate that Mn modified BLF-PTM is a competitive high power and high temperature piezoelectric material with excellent piezoelectric properties.
SHI Guiyang, WANG Dalei, BU Shundong, JIN Dengren, and CHENG Jinrong School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
Zhao, Xuelian Jiang, Dan Yu, Shengwen Cheng, Jinrong
