In this work, a series of CrA1YN films doped with 1 at.% yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages, The effects of bias voltage on microstrncture and properties of the CrA1YN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher A1 content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000℃, and good friction and wear properties at 600 and 800 ℃, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures （i.e., 200 and 400 ℃） due to the serious abrasive wear.
Cu2ZnSn（S,Se）4（CZTSSe） thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization.Composition,microstructure,morphology,and properties of the asprepared CZTSSe thin films were investigated.XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions.SEM results showed that the CZTSSe thin film had a uniform morphology and large grains.EDS results revealed the composition of CZTSSe film was Cu：Zn：Sn：S：Se = 23.7：12.6：12.2：37.7：13.8（in at%）,which was in accordance with the stoichiometric Cu2ZnSn（S,Se）4.The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV.The resistivity,carrier concentration,and mobility were 0.53 X cm,7.9 9 1018cm3,and 7.5 cm2/（Vs）,respectively.
