Polyethylene terephthalate (PET) has been modified by Si ion implantation with a dose ranging from 1 1016 to 2 1017 ions /cm2 using a metal vapor vacuum arc(MEVVA)source. The surface morphology was observed by atomic force microscopy (AFM). The change in the microstructure of Si implanted PET was observed with a transmission electron microscope (TEM). It is believed that the change would improve the conductive properties and wear resistance. The electrical properties of PET have been improved via Si ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. When Si ion dose was 2 1017 cm-2, the resistivity of PET could be less than 7.9 W·m. The surface hardness and modulus increased obviously. The mechanical property of the implanted PET has been modified greatly. The hardness and modulus of Si implanted PET with a dose of 2 1017/cm2 are 12.5 and 2.45 times greater than those of pristine PET, respectively. The area of cutting groove for Si implanted PET is narrower and shallower than those of the unimplanted PET. So the wear resistance is greatly raised. In comparison with metal ion implantation, the improvement of mechanical properties is obvious in ion implantation into PET. Si ion beam modification mechanism of PET is discussed.
Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 mA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50 mA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the transistors decrease markedly; the microwave property has been improved obviously.
Nanometer TiN/AlN multilayers were prepared on silicon substrate by filtered vacuum arc deposition.The structures of the nanometer TiN/AlN multilayer were studied by using X-ray diffraction. The 12 nm TiN/AlN multiplayer is composed of cubic TiN structure and hexagonal wurzite AlN structure, but the 2 nm period multilayer is composed of face centered cubic structure TiN and AlN with strong (200) texture. The surface roughness, hardness and elastic modulus of multilayer are dependent on the period of multilayer. The hardness of the TiN/AlN multilayers is higher than that suggested by a simple rule of mixture. The peaking hardness of nanometer TiN/AlN multilayers at period of 2 nm is about 42 GPa, much higher than that of 12 nm. The wear resistance of the nanometer TiN/AlN multilayers was also studied.
