Five-fold symmetric diamond crystals(FSDCs) were synthesized by hot filament chemical vapour deposition(HFCVD) methods. Their surface morphologies and defects were characterised by scanning electron microscopy(SEM). From the perspective of nucleation-growth, a growth mechanism for icosahedral and other five-fold symmetric diamond crystals was discussed. Computer modelling was also carried out. The results show that the dodecahedrane(C20H20) molecule is proposed as a nucleus for the growth of icosahedral diamond crystals(IDCs), wherein the 20 {111} surface planes develop orthogonal to the direction of the original 20 C—H bonds by sequential H abstraction and CH3 addition reactions. IDC can be pictured as an assembly of isosceles tetrahedra, with each tetrahedron contributing a {111} plane to the surface of the IDC and the remainder of the tetrahedral surfaces forming twin planes with neighbouring tetrahedra. The small mismatch(1.44°) between the {111} surface dihedral angle of a perfect icosahedron and that of a twinned icosahedron reveals itself via twin planes in the IDC grain. The modelling suggests how the relief of strain induced by this distortion could lead to the formation of defects such as concave pentagonal cavities at vertices and grooves along the grain edges that accord well with those observed experimentally. Similar arguments based on growth from the hexacyclo pentadecane(C15H20) nucleus can also account for the observed formation of star and rod shaped FSDCs, and some of their more obvious morphological defects.
The microscopic mechanical characteristics of ultranano-crystalline diamond films which were prepared in four different atmospheres were investigated for the applications in microelectron-mechanical system(MEMS).The loading-unloading curves and the change of modulus and hardness of samples along with depth were achieved through nanoindenter.The results show that the films which are made in atmosphere without Ar have the highest recovery of elasticity,hardness(72.9 GPa) and elastic modulus(693.7 GPa) among the samples.Meanwhile,samples fabricated at a low Ar content have higher hardness and modulus.All the results above demonstrate that atmosphere without Ar or low Ar content leads to better mechanical properties of nanodiamond films that are the candidates for applications in MEMS.
A series of boron-doped polycrystalline diamond films were prepared by hot filament (HF) chemical vapor deposition on Nb substrates. The effects of B/C ratio of reaction gas on film morphology, growth rate, chemical bonding states, phase composition and electrochemical properties of each deposited sample were studied by scanning electron microscopy, Raman spectra, X-ray diffraction, microhardness indentation, and electrochemical analysis. Results show that the average grain size of diamond and the growth rate decrease with increasing the B/C ratio. The diamond films exhibit excellent adhesion under Vickers microhardness testing (9.8 N load). The sample with 2% B/C ratio has a wider potential window and a lower background current as well as a faster redox reaction rate in H2SO4 solution and KFe(CN)6 redox system compared with other doping level electrodes.
A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition(HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope(FE-SEM) with energy dispersive X-ray detector(EDX). Results show that the nucleation density is found to be up to 1010 cm-2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.
Wurtzite aluminum nitride(AlN) films were deposited on Si(100) wafers under various sputtering pressures by radio-frequency(RF) reactive magnetron sputtering. The film properties were investigated by XRD, SEM, AFM, XPS and nanoindenter techniques. It is suggested from the XRD patterns that highly c-axis oriented films grow preferentially at low pressures and the growth of(100) planes are preferred at higher pressures. The SEM and AFM images both reveal that the deposition rate and the surface roughness decrease while the average grain size increases with increasing the sputtering pressure. XPS results show that lowering the sputtering pressure is a useful way to minimize the incorporation of oxygen atoms into the AlN films and hence a film with closer stoichiometric composition is obtained. From the measurement of nanomechanical properties of AlN thin films, the largest hardness and elastic modulus are obtained at 0.30 Pa.