A novel organic electroluminescent device was made with the structure of ITO/PVK：Tb0.5Eu0.5（TTA）3 Dipy/ BCP/Alq3/Al（a） which utilized the rare earth complex Tb0.5Eu0.5（TTA）3 Dipy as the emitting layer. When it was driven under a direct electric field, 612 nm emission from EU^3＋ and 410 nm emission from PVK were observed. In addition, in the EL spectrum a new peak at 490 nm appeared. From the analysis of different devices, the mechanism of the new emission was studied. It was concluded that the new emission was the electroplex originating from the interface between the ligand （TTA）3Dipy and BCP.
Absorption is the origin of luminescence. But it must be noticed that the lifetime of luminescence might reversely influence the rate of absorption. In this paper, it is reported that the luminescence intensity of copper and manganese changes with the driving frequency at constant voltage. The variation of luminescent intensity depends only on the lifetime of luminescence but not on the type of quenching or other factors. Generally the rate of absorption is dominantly determined by the material property and the lifetime of luminescence centres, the absorption ~f shorter lifetime centre will be larger than that of the longer lifetime centre at the same excited condition.
The acceleration ability of electrons in SiO2 and ZnS was compared through the variation of emission intensity based on ZnS ： Er electroluminescence during the reverse of polarity of sinusoidal voltage. In order to avoid the influence of work function of electrode, cathodal and anodal materials were ITO （indium tin oxide）. The ratio of maximum emission intensity under positive and negative half period is 2.18. This result demonstrates that the electron acceleration ability of SiO2 is 2.18 times stronger than that of ZnS.
In the solid state cathodoluminescence （SSCL）, organic materials were excited by hot electrons accelerated in silicon oxide （SiO2） layer under alternating current （AC）. In this paper exciton behaviours were analysed by using transient spectra under different driving voltages. The threshold voltages of SSCL and exciton ionization were obtained from the transient spectra. The recombination radiation occurred when the driving voltage went beyond the threshold voltage of exciton ionization. From the transient spectrum of two kinds of luminescence （exciton emission and recombination radiation）, it was demonstrated that recombination radiation should benefit from the exciton ionization.
