AlN films were prepared on Si(100) and quartz glass substrates with high deposition rate of 30 nm·min^(-1) at the temperature of below 85℃ by the magnetic-filtered cathodic arc ion plating(FCAIP) method. The as-deposited AlN films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of AlN is confirmed by N1s and Al2p X-ray photoelectron spectroscopy(XPS). The XPS depth profile analysis shows that oxygen is mainly absorbed on the AlN surface. The AlN film has Al and N concentrations close to the stoichiometric ratio with a small amount of Al_2O_3. The prepared AlN films are highly transparent over the wave-length range of 210–990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale AlN films with controlled structure and good optical properties at low temperature.
