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国家自然科学基金(60576039)

作品数:3 被引量:1H指数:1
相关作者:乔士柱张宁玉许福运陈莹赵俊卿更多>>
相关机构:山东建筑大学更多>>
发文基金:国家自然科学基金山东省自然科学基金国家重点基础研究发展计划更多>>
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Improving Efficiency by Doping PtOEP into Spiro Light-Emitting Devices
2008年
To investigate effective means of improving the efficiency of organic light-emitting devices (OLEDs) by making full use of ,triplet emission, a phosphorescent material Pt (II) Octaethylporphine (PtOEP) is doped into polymer host polyspirobifluorene (Spiro) to allow radiative recombination of triplet excitons. The current and brightness characteristics of the devices are tested and the electroluminescent spectra are described. Both fluorescence and phosphorescence are ob- served,and an obvious increase in external quantum efficiency is realized compared to undoped devices when different phosphorescent dopant concentrations are tried. Thus,the phosphorescent emission from triplet excited states might be an effective way to increase the efficiency of OLEDs when the concentration of the phosphorescent dopant is properiy controlled.
赵俊卿乔士柱许福运张宁玉庞岩涛陈莹
关键词:TRIPLET
Spiro发光双层结构有机电致发光器件被引量:1
2007年
为了研究简单结构有机电致发光器件的发光性能,采用PEDOT∶PSS作为空穴输运层,Spiro作为电子输运层和发光层,以金属Ba覆盖以金属Al作阴极,制备双层结构有机电致发光器件,得到性能稳定的蓝色发光。测量器件的电流密度-电压特性、发光亮度-电压特性和电致发光谱,计算了器件的外量子效率。结果表明,器件电流以陷阱电荷限制电流为主,最大发光亮度为3544cd/m2,最大外量子效率达2.40%。
赵俊卿乔士柱许福运张宁玉庞岩涛陈莹
关键词:有机电致发光器件亮度外量子效率
Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering
2007年
Transparent conducting oxide film of molybdenum-doped zinc oxide (MZO) with high transparency and relatively low resistivity was prepared by RF (radio frequency) magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD (X-ray diffraction) patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.
Xianwu XIUZhiyong PANGMaoshui LVYing DAILi'na YEShenghao HAN
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