We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors （the two-dimensional electron gas （2DEG））. It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.
We compare the transport properties of electrons in monolayer graphene by modulating the Fermi velocity inside the barrier. A critical transmission angle is found only when the Fermi velocity in the barriers is larger than the one outside the barriers. It is shown that the transmission exhibits periodicity with the incident angle below the critical transmission angle, and attenuates exponentially in the opposite situation. For both situations, peak splitting occurs in the transmission as the number of the velocity barriers increases, and the characteristics of the transmission suggest an interesting application of an excellent band-pass filter. The dependence of the conductance on the Fermi energy through an identical velocity- modulation structure differs wildly with different Fermi velocities of the barrier. The counterpart of the peak splitting is the sharp oscillations in the conductance profile. Furthermore, some oscillations for the multiple barriers are so sharp that the structure may be used as an excellent sensor.
