This paper investigates the capacitance-voltage(C-V) measurement on fully silicided(FUSI) gated metal-oxide-semiconductor(MOS) capacitors and the applicability of MOS capacitor models.When the oxide leak-age current of an MOS capacitor is large,two-element parallel or series model cannot be used to obtain its real C-V characteristic.A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used.We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors.The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion,while that extracted by the four-element model is close to the real capacitance,showing little frequency dispersion.The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program.We also investigated the influence of MOS capacitor's area on the measurement accuracy.The results indicate that the decrease of capacitor area can reduce the dissipation fac-tor and improve the measurement accuracy.As a result,the frequency dispersion of the measured capacitance is significantly reduced,and real C-V characteristic can be obtained directly by the series model.In addition,this pa-per investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide.The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current,which is essential for the quasi-static C-V measurement.On the other hand,the photonic high-frequency C-V measurement can bypass the leakage problem,and get reliable low-frequency C-V characteristic,which can be used to evaluate whether the full silicidation has completed or not,and to extract
