TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp^ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp^ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp^2C–C and sp^3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.
Bin HanZe-Song WangD. NeenaBao-Zhu LinBing YangChuan-Sheng LiuDe-Jun Fu
为了研究氮气气压对Ti Si N涂层显微结构与腐蚀行为的影响,采用自制多弧离子镀设备,在抛光的单晶(100)硅片与不锈钢基底上沉积Ti Si N涂层,沉积气压0.5~2.5 Pa,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)与电化学阻抗谱(EIS)表征涂层显微结构与电化学性能。结果表明:沉积的Ti Si N涂层为纳米晶-非晶复合结构,其中纳米Ti N晶体被非晶的Si3N4包围。当氮气气压从0.5 Pa升高到2.5 Pa之后,Ti Si N涂层晶粒尺寸由19.5 nm减小到8.0 nm。电化学阻抗随着氮气气压升高先增大后逐渐下降,沉积气压为1.0 Pa时,涂层抗腐蚀性能最强。
