The 0.96Na_(0.5)Bi_(0.5)TiO_(3)-0.04K_(0.5)Bi_(0.5)TiO_(3)(NKBT96/4)lead-free single crystal was successfullygrown by top-seeded solution growth method.The effective segregation coefficient for K was calculated to be 0.20.X-ray powder difraction measurement showed that the as-grown crystalpossesses rhombohedral perovskite structure at room temperature.X-ray rock curve measureindicated that the as-grown single crystal owned relatively higher quality.The NKBT96/4 singlecrystal exhibits apparent diffused dielectric behavior,where the diffusiveness index aαis 1.79 forthe[001]-oriented crystal planes.A notable thermal hysteresis,△T_(h),of 25℃was disclosed for thetetragonal antiferroelectric-tetragonal paraelectric phase transition in the dielectric propertystudies between heating and cooling.The highest remnant polarization,P_(r),16.8μC/cm^(2),wasobtained at 100℃.The electromechanical coupling coefficient k_(t)of the[001]-oriented crystalplanes at room temperat ure was determined to be 38%using resonance-antiresonance technique.The room temperature piezoelectric constant d_(33)reaches 120 pC/N.
Measured results of magnetoelectric (ME) and converse magnetoelectric (CME) effects of TbxDy1-xFe2-y/ Pb(Mg1/3Nb2/3)(1-x)TixO3/TbxDy1-xFe2-y (TD/PMNT/TD) and PMNT/TD/PMNT laminated composites are pre- sented. ME effect was determined by measuring laminate voltage output under a Helmholtz-gener- ated AC field biased by a DC field (0―1 kOe) (1 Oe = 79.58 A/m). The CME effect was measured by re- cording the voltage induced in a solenoid encompassing the ME sample while exposed to a DC bias field and PMNT layer driven by a 10 V AC source. The ME and CME responses in the two laminated structure are linear. The highest values of ME coefficients in TD/PMNT/TD and PMNT/TD/PMNT com- posites are 384 mV/Oe and 158 mV/Oe, respectively, while the highest values of CME coefficients in the two composites are 118 mG/V and 162 mG/V (1 G=10-4 T), respectively.
JIA YanMinLUO HaoSuOR Siu WingWANG YaoJinCHAN Helen L W
<正>High Cure temperature and larger coercive field ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-P...
Wei Wang~(*1,2),Yaoyao Zhang~(1,2),Xiangyong Zhao~1,Haosu Luo~1 1 Key Laboratory of Inorganic Functional Material and Device,Shanghai Institute of Ceramics, Chinese Academy of Sciences,215 Chengbei Road,Jiading,Shanghai 201800,China 2 Graduate School of the Chinese Academy of Sciences,Beijing 100039,China
